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AP10H06S N Channel Mos Field Effect Transistor High Frequency

Categories Mosfet Power Transistor
Brand Name: Hua Xuan Yang
Model Number: AP10H06S
Certification: RoHS、SGS
Place of Origin: ShenZhen China
MOQ: Negotiation
Price: Negotiated
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Boxed
Product name: N Channel Mos Field Effect Transistor
Model: AP10H06S
Pack: SOP-8
Marking: AP10H06S
VDSDrain-Source Voltage: 60V
VGSGate-Sou rce Voltage: ±20A
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    AP10H06S N Channel Mos Field Effect Transistor High Frequency

    AP10H06S N Channel Mos Field Effect Transistor High Frequency


    N Channel Mos Field Effect Transistor types


    Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers. They use a number of different techniques that enable the power MOSFETs to carry the current and handle the power levels more efficiently. As already mentioned they often incorporate a form of vertical structure

    The different types of power MOSFET have different attributes and therefore can be particularly suited for given applications.

    • Planar power MOSFET: This is the basic form of power MOSFET. It is good for high voltage ratings because the ON resistance is dominated by the epi-layer resistance. This structure is generally used when a high cell density is not needed.
    • VMOS: VMOS power MOSFETs have been available for many years. The basic concept uses a V groove structure to enable a more vertical flow of the current, thereby providing lower ON resistance levels and better switching characteristics. Although used for power switching, they may also be used for high frequency small RF power amplifiers.
    • UMOS: The UMOS version of the power MOSFET uses a grove similar to that the VMOS FET. However the grove has a flatter bottom to it and provides some different advantages.
    • HEXFET: This form of power MOSFET uses a hexagonal structure to provide the current capability.
    • TrenchMOS: Again the TrenchMOS power MOSFET uses a similar basic grove or trench in the basic silicon to provide better handling capacity and characteristics. In particular, Trench power MOSFETs are mainly used for voltages above 200 volts because of their channel density and hence their lower ON resistance.

    N Channel Mos Field Effect Transistor Features


    VDS = 60V ID =10A
    RDS(ON) < 20mΩ @ VGS=10V


    N Channel Mos Field Effect Transistor Application


    Battery protection
    Load switch
    Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP10H06SSOP-8AP10H06S3000

    Absolute Maximum Ratings (TC=25unless otherwise noted)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS60V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID10A
    Drain Current-Continuous(TC=100 ℃)ID (100 ℃)5.6A
    Pulsed Drain CurrentIDM32A
    Maximum Power DissipationPD2.1W
    Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150
    Thermal Resistance,Junction-to-Ambient (Note 2)RθJA60℃/W

    Electrical Characteristics (TC=25unless otherwise noted)


    ParameterSymbolConditionMinTypMaxUnit
    Drain-Source Breakdown VoltageBV DSSV GS=0V ID=250μA60-V
    Zero Gate Voltage Drain CurrentIDSSV DS=60V,V GS=0V--1μA
    Gate-Body Leakage CurrentIGSSV GS=±20V,VDS=0V--±100nA
    Gate Threshold VoltageV GS(th)V DS=V GS,ID=250 μA1.01.62.2V

    Drain-Source On-State Resistance


    RDS(ON)

    V GS=10V, ID=8A-15.620mΩ
    V GS=4.5V, ID=8A-2028mΩ
    Forward TransconductancegFSV DS=5V,ID=8A18--S
    Input CapacitanceClss

    V DS=30V,V GS=0V, F=1.0MHz

    -1600-PF
    Output CapacitanceCoss-112-PF
    Reverse Transfer CapacitanceCrss-98-PF
    Turn-on Delay Timetd(on)-7-nS
    Turn-on Rise Time

    r

    t

    -5.5-nS
    Turn-Off Delay Timetd(off)-29-nS
    Turn-Off Fall Time

    f

    t

    -4.5-nS
    Total Gate ChargeQg

    V DS=30V,ID=8A, V GS=10V

    -38.5-nC
    Gate-Source ChargeQgs-4.7-nC
    Gate-Drain ChargeQgd-10.3-nC
    Diode Forward Voltage (Note 3)V SDV GS=0V,IS=8A--1.2V
    Diode Forward Current (Note 2)IS---8A
    Reverse Recovery Time

    rr

    t

    TJ = 25°C, IF =8A

    di/dt = 100A/ μs

    -28-nS
    Reverse Recovery ChargeQrr-40-nC
    ParameterSymbolConditionMinTypMaxUnit
    Drain-Source Breakdown VoltageBV DSSV GS=0V ID=250μA60-V
    Zero Gate Voltage Drain CurrentIDSSV DS=60V,V GS=0V--1μA
    Gate-Body Leakage CurrentIGSSV GS=±20V,VDS=0V--±100nA
    Gate Threshold VoltageV GS(th)V DS=V GS,ID=250 μA1.01.62.2V

    Drain-Source On-State Resistance


    RDS(ON)

    V GS=10V, ID=8A-15.620mΩ
    V GS=4.5V, ID=8A-2028mΩ
    Forward TransconductancegFSV DS=5V,ID=8A18--S
    Input CapacitanceClss

    V DS=30V,V GS=0V, F=1.0MHz

    -1600-PF
    Output CapacitanceCoss-112-PF
    Reverse Transfer CapacitanceCrss-98-PF
    Turn-on Delay Timetd(on)-7-nS
    Turn-on Rise Time

    r

    t

    -5.5-nS
    Turn-Off Delay Timetd(off)-29-nS
    Turn-Off Fall Time

    f

    t

    -4.5-nS
    Total Gate ChargeQg

    V DS=30V,ID=8A, V GS=10V

    -38.5-nC
    Gate-Source ChargeQgs-4.7-nC
    Gate-Drain ChargeQgd-10.3-nC
    Diode Forward Voltage (Note 3)V SDV GS=0V,IS=8A--1.2V
    Diode Forward Current (Note 2)IS---8A
    Reverse Recovery Time

    rr

    t

    TJ = 25°C, IF =8A

    di/dt = 100A/ μs

    -28-nS
    Reverse Recovery ChargeQrr-40-nC

    Note


    1. Repetitive Rating: Pulse width limited by maximum junction temperature.

    2. Surface Mounted on FR4 Board, t ≤ 10 sec.

    3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

    4. Guaranteed by design, not subject to production


    Attention


    1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

    2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

    3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

    4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

    5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

    6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

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