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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: SGP02N120
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8300pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Collector-emitter voltage: 1200 V
DC collector current: 6.2 A
Pulsed collector current: 9.6 A
Gate-emitter voltage: ±20 V
Power dissipation: 62 W
Operating junction and storage temperature: -55...+150°C
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    SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology


    SGP02N120, SGB02N120, SGD02N120


    Fast S-IGBT in NPT-technology


    • 40% lower Eoff compared to previous generation

    • Short circuit withstand time – 10 µs

    • Designed for:

    - Motor controls

    - Inverter

    - SMPS

    • NPT-Technology offers:

    - very tight parameter distribution

    - high ruggedness, temperature stable behaviour

    - parallel switching capability



    Maximum Ratings

    ParameterSymbolValueUnit
    Collector-emitter voltageVCE1200V

    DC collector current

    TC = 25°C

    TC = 100°C

    IC

    6.2

    2.8

    A
    Pulsed collector current, tp limited by TjmaxICpuls9.6A
    Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C9.6A
    Gate-emitter voltageVGE±20V
    Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°CEAS10mJ
    Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°CtSC10µs
    Power dissipation TC = 25°CPtot62W
    Operating junction and storage temperatureTj , Tstg-55...+150°C
    Soldering temperature, 1.6mm (0.063 in.) from case for 10s260°C

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    Quality SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology for sale
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